Trina Solar Announces New Efficiency Record of 23.5% for Large-Area Interdigitated Back Contact Silicon Solar Cell

Changzhou, China - Trina Solar announced that its State Key Laboratory of PV Science and Technology of China has set a new world record of 23.5% for a high-efficiency silicon solar cell with an Interdigitated Back Contact (IBC) structure on a large-area 156x156 mm2 n-type mono-crystalline silicon (c-Si) wafer.

This new record has been independently confirmed by the Japan Electrical Safety & Environment Technology Laboratories (JET), Yokohama, Japan.

The record-breaking n-type mono-crystalline silicon solar cell was fabricated with a process that integrates the advanced Interdigitated Back Contact structure with industrial low-cost processes. The best 156x156 mm2 solar cell fabricated entirely with a screen-printed process reached a total-area efficiency of 23.5%, which breaks the previous record of 22.94% for the same type of solar cell that was also established by the Company in May, 2014.

Particularly, this remarkable result has been achieved just two years after the previous announcement by Trina Solar of 24.4% efficiency for a small area (2cm x 2cm) laboratory IBC solar cell developed in collaboration with the Australian National University (ANU) in Canberra, Australia.

Source: IWR Online, 26 Apr 2016