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GT Advanced Technologies Opens New Silicon Carbide Manufacturing Facility

Hudson, USA - GTAT Corporation (GTAT) opened its new state-of-the-art silicon carbide manufacturing plant with a ribbon-cutting ceremony on Tuesday, June 26, 2018 that included state and local officials who were on hand to commemorate the event.

The facility, located in Hudson, New Hampshire, also includes the company's new corporate headquarters as well as its advanced research and development center.

According to the company, silicon carbide, a crucial material for high-power electronics, is a key enabler of a new generation of products in growing markets such as electric vehicles, data centers and solar systems. GTAT has been a leader in the development of advanced materials, equipment and technology solutions for global markets in photovoltaics and optoelectronics.

"The opening of our new silicon carbide production facility represents a significant milestone for the company's transition from an equipment provider to a materials company," said Greg Knight, GTAT's president and chief executive officer.

The company is continuing to commercialize other technologies such as its new tube filaments used to lower the cost of producing polysilicon and its continuous Cz feeder, which lowers the cost of producing monocrystalline silicon wafers for the solar industry.

About GTAT Corporation GTAT Corporation is a diversified technology company producing advanced materials and innovative crystal growth technology for the solar, power electronics and optoelectronics industries. The company's technical innovations accelerate the growth of a new generation of products across this diversified set of global markets.



Source: IWR Online, 29 Jun 2018